transistor(npn) features z low saturation medium current application z extremely low collector saturation voltage z suitable for low voltage large current drivers z high dc current gain and large current capability z low on resistance : r on =0.6 ? (max.) (i b =1ma) marking:123 maximum ratings (t a =25 unless otherwise noted) symbol parameter value units v cbo collector-base voltage 20 v v ceo collector-emitter voltage 15 v v ebo emitter-base voltage 6.5 v i c collector current -continuous 1 a p c collector power dissipation 350 mw t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br) cbo i c =50 a, i e =0 20 v collector-emitter breakdown voltage v (br) ceo i c =1ma, i b =0 15 v emitter-base breakdown voltage v (br) ebo i e = 50 a, i c =0 6.5 v collector cut-off current i cbo v cb = 20 v, i e =0 0.1 a emitter cut-off current i ebo v eb = 6v, i c =0 0.1 a dc current gain h fe v ce =1v, i c = 100ma 150 collector-emitter saturation voltage v ce (sat) i c =500ma, i b = 50ma 0.3 v transition frequency f t v ce =5v, i c =50ma 260 mhz collector output capacitance cob v cb =10v, i e =0, f=1mhz 5 pf on resistance r on f=1khz,i b =1ma, v in =0.3v 0.6 ? sot-23 1. base 2. emitter 3. collector std1 23s 1 date:2011/05 www.htsemi.com semiconductor jinyu
2 date:2011/05 www.htsemi.com semiconductor jinyu std1 23s
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